TM1001 QFN-3x3mm-12L

TM101A
TM1001

TM1001 QFN-3x3mm-12L

2.4GHz Power amplifier High Efficiency HBT MMIC with 25dB gain

The TM1001 is manufactured on Gallium Arsenide Heterojunction Bipolar Transistor (GaAs HBT) process. The device is a low cost, high linearity, medium power, high efficiency amplifier IC designed for IEEE 802.11b/g, Bluetooth Class 1, and other application in the 2.4GHz ISM band. The device also features analog power control to optimize transmit power while maximizing battery life in portable equipment. The device includes an integrated power detector circuit for closed loop control of output power. The TM1001 is packaged in a compact 3mm by 3mm QFN package with a backside ground as RF GND and Thermal GND.

Downloads:Data Sheet Brochure

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