TM1007 QFN-3x3mm-16L

1007
TM1007

TM1007 QFN-3x3mm-16L

2.4GHz high linear power amplifier MMIC

The TM1007 manufactured on Gallium Arsenide Heterojunction Bipolar Transistor (GaAs HBT) process is a low cost, high power, high efficiency amplifier IC designed for wireless data application at 2.4 to 2.5GHz ISM band. The device is packaged in a compact QFN 3mm by 3mm 16L package. This high linearity device makes it ideal for IEEE 802.11.b/g, Wireless Data Terminal and portable battery powered equipment. The device also features analog power control to optimize transmit power while maximizing battery life in portable equipment with 200mW transmit power at antenna port. The power control function also eliminates the need for directional couplers, detector diodes and other power control circuitry. This allows the device to be directly driven by the DAC output.

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