TM1016 DFN-2x2mm-8L


TM1016 DFN-2x2mm-8L

5.8GHz Power Amplifier HBT MMIC

The TM1016 is manufactured on Gallium Arsenide Heterojunction Bipolar Transistor (GaAs HBT) process. The device is a low cost, high linearity, low power consumption, high efficiency amplifier IC designed for IEEE 802.11a, ETC, Wireless Audio/Video and other application in the 5.8GHz ISM band. The device also features analog power control to optimize transmit power while maximizing battery life in portable equipment. The device includes an integrated power control circuit for closed loop control of output power. The TM1016 is packaged in a compact 2mm by 2mm DFN package with a backside ground.

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