MMIC / MCM
MMIC / MCM
Product & App
TM1001 QFN-3x3mm-12L
2.4GHz Power amplifier High Efficiency HBT MMIC with 25dB gain The TM1001 is manufactured on Gallium Arsenide Heterojunction Bipolar Transistor (GaAs HBT) process. The device is a low …
TM1002 WCSP 1.1×0.75X0.37 mm
2.3~2.7GHz Low Noise Amplifier with a bypass RF Switch The TM1002 is a Low Noise Amplifier (LNA) MMIC with a bypass switch for 2.3~2.7 GHz receiver applications, available …
TM1006 QNF-3x3mm-12L
3GHz Low Noise Amplifier HBT MMIC The TM1006 is a low cost, low noise amplifier IC, designed for DC-3GHz application. The device is packaged in a compact 3mm …
TM1007 QFN-3x3mm-16L
2.4GHz high linear power amplifier MMIC The TM1007 manufactured on Gallium Arsenide Heterojunction Bipolar Transistor (GaAs HBT) process is a low cost, high power, high efficiency amplifier IC …
TM1009 DFN-1.5×1.5mm-6L
3GHz ultra small package Low Noise Amplifier MMIC The TM1009 is a low cost and low noise amplifier (LNA) IC, designed for GPS, DVB, PHS and DECT applications …
TM1010 QFN-3x3mm-16L
2.4GHz single chip Front End HBT MMIC The TM1010 is a front-end IC and uses an advanced Gallium Arsenide Heterojunction Bipolar Transistor (GaAs HBT) process. The front-end consists …
TM1011 QFN-3x3mm-16L
WiFi 802.11 b/g/n High-Gain Power Amplifier The TM1011 manufactured on Gallium Arsenide Heterojunction Bipolar Transistor (GaAs HBT) process is a low cost, high gain, high power, high efficiency …
TM1016 DFN-2x2mm-8L
5.8GHz Power Amplifier HBT MMIC The TM1016 is manufactured on Gallium Arsenide Heterojunction Bipolar Transistor (GaAs HBT) process. The device is a low cost, high linearity, low power …
TM2006 QFN-3x3mm-16L
2.4~2.5Ghz Front End MCM IC TM2006 is a RF front end MCM IC. We use advanced HBT process technology to manufacture the IC. The TM2006 IC includes power …
TM2008 QFN-3x3mm-16L
2.4~2.5GHz Front End MCM IC with high gain LNA TM2008 is an MCM IC, which includes 2 RF switchs and 1 LNA in package. The switch provide 0.5dB …
TM2009 QFN-4x4mm-20L
2.4-2.5GHz RF Front-End MCM IC The TM2009 is a front-end MCM Module and uses an advanced Gallium Arsenide (GaAs) process. The front-end module consists of a Power Amplifier …
TM2018 QFN-3x3mm-16L
High power high gain power amplifier MMIC The EPA2010A is a three-stage linearized power amplifier optimized for 802.11b/g/n wireless LAN(WLAN) applications in the 2.4 GHz band. It features …
TM3001 SOT-363
2.4GHz RF switch SPDT in SOT-363 package The TM3001 is a GaAs SPDT switch MMIC in a SOT-363 6 lead plastic package. The TM3001 features low insertion loss …
TM3005 DFN-1.5×1.5mm-6L
6GHz SPDT RF switch in DFN-1.5×1.5mm-6L The TM3005 is a GaAs MMIC SPDT switch in a DFN 1.5×1.5×0.75mm 6 lead plastic package. The TM3005 features low insertion loss …
